Suppression of boron penetration in PMOS by using oxide gettering effect in Poly-Si gate

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[1] Lin, Yung Hao

[2] Lee, Chung Len

[3] Lei, Tan Fu

[4] Sheng Chao, Tien

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Lin, Yung Hao | 1600年 / JJAP, Minato-ku, Japan卷 / 34期

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