HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFET'S.

被引：0

作者：

Weber, W. ^{[1
]}

Lau, F. ^{[1
]}

机构：

[1] Siemens AG, Munich, West Ger, Siemens AG, Munich, West Ger

来源：

Electron device letters | 1987年 / EDL-8卷 / 05期

关键词：

Manuscript received December 18; 1986; revised February 19; 1987. This work was supported by the Federal Department of Research and Technology of the Federal Republic of Germany. The authors are with Corporate Research and Development; Microelectronics; Siemens AG; 8000; Munich; 83; Germany. IEEE Log Number 8714475;

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：208 / 210

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