Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

被引：0
|
作者：
Iosad, N.N. [1 ]
Balashov, D.V. [1 ]
Kupriyanov, M.Yu. [1 ]
Polyakov, S.N. [1 ]
Roddatis, V.V. [1 ]
机构：
[1] Inst of Radioelectronics Russian, Acad of Sciences, Moscow, Russia
来源：
IEEE Transactions on Applied Superconductivity | 1997年 / 7卷 / 2 pt 3期
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页码：2805 / 2808
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