Field-induction-drain thin-film transistors for liquid-crystal display applications

被引：0

作者：

Tanaka, Keiji ^{[1
]}

Suyama, Shiro ^{[1
]}

Kato, Kinya ^{[1
]}

机构：

[1] NTT Interdisciplinary Research Lab, Musashino, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 11 B期

关键词：

Integrated Circuits; CMOS - Semiconducting Silicon - Thin Films - Transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A field-induction-drain (FID) poly-Si thin-film transistor (TFT), in which an electrically induced layer is used as a drain, is proposed. This TFT achieves a low OFF current and a high ON/OFF current ratio by simply incorporating an additional gate electrode. Moreover, the structure can be modified to make it suitable for complementary MOS (CMOS) applications. In this unified-structure FID (UFID) TFT, n-channel operation and p-channel operation are interchangeable. This paper presents this electrically induced layer which works well as a TFT drain and has beneficial influence on TFT characteristics.

引用

页码：3302 / 3307