X-ray standing wave analysis of GaAs/Si interface

被引：0
|
作者：
Kawamura, Tomoaki [1 ]
Takenaka, Hisataka [1 ]
Uneta, Makoto [1 ]
Oshima, Masaharu [1 ]
Fukuda, Yukio [1 ]
Ohmachi, Yoshiro [1 ]
Izumi, Koichi [1 ]
Ishikawa, Tetsuya [1 ]
Kikuta, Seishi [1 ]
Zhang, Xiao Wei [1 ]
机构：
[1] NTT Interdisciplinary Research Lab, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
Semiconducting gallium arsenide;
D O I：
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学科分类号：
摘要：
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页码：622 / 625
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