X-ray standing wave analysis of GaAs/Si interface

被引：0
|
作者：
Kawamura, Tomoaki [1 ]
Takenaka, Hisataka [1 ]
Uneta, Makoto [1 ]
Oshima, Masaharu [1 ]
Fukuda, Yukio [1 ]
Ohmachi, Yoshiro [1 ]
Izumi, Koichi [1 ]
Ishikawa, Tetsuya [1 ]
Kikuta, Seishi [1 ]
Zhang, Xiao Wei [1 ]
机构：
[1] NTT Interdisciplinary Research Lab, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：622 / 625
相关论文
共 50 条
  • [1] X-RAY STANDING WAVE ANALYSIS OF THE GAAS/SI INTERFACE
    KAWAMURA, T
    FUKUDA, Y
    OSHIMA, M
    OHMACHI, Y
    IZUMI, K
    HIRANO, K
    ISHIKAWA, T
    KIKUTA, S
    SURFACE SCIENCE, 1991, 251 : 185 - 190
  • [2] X-RAY STANDING WAVE ANALYSIS OF GAAS/SI INTERFACE
    KAWAMURA, T
    TAKENAKA, H
    UNETA, M
    OSHIMA, M
    FUKUDA, Y
    OHMACHI, Y
    IZUMI, K
    ISHIKAWA, T
    KIKUTA, S
    ZHANG, XW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 622 - 625
  • [3] X-RAY STANDING WAVE ANALYSIS OF AL/GAAS/SI(111)
    KAWAMURA, T
    OSHIMA, M
    FUKUDA, Y
    OHMACHI, Y
    IZUMI, K
    ISHIKAWA, T
    KIKUTA, S
    ZHANG, XW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (03): : 737 - 741
  • [4] X-ray standing wave analysis of Al/GaAs/Si(111)
    Kawamura, Tomoaki, 1600, (31):
  • [5] Lattice position of Si in GaAs determined by x-ray standing wave measurements
    1600, (73):
  • [6] X-RAY STANDING-WAVE STUDY OF THE SB/GAAS(110) INTERFACE STRUCTURE
    KENDELEWICZ, T
    WOICIK, JC
    HERRERAGOMEZ, A
    MIYANO, KE
    COWAN, PL
    KARLIN, BA
    PIANETTA, P
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 2351 - 2353
  • [7] LATTICE POSITION OF SI IN GAAS DETERMINED BY X-RAY STANDING-WAVE MEASUREMENTS
    SHIH, A
    COWAN, PL
    SOUTHWORTH, S
    FOTIADIS, L
    HOR, C
    KARLIN, B
    MOORE, F
    DOBISZ, E
    DIETRICH, H
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8161 - 8168
  • [8] X-ray standing wave study of a Si-adsorbed GaAs(001) surface
    Sugiyama, M
    Maeyama, S
    Oshima, M
    APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3731 - 3733
  • [9] X-RAY STANDING WAVE ANALYSIS OF BISMUTH IMPLANTED IN SI(110)
    HERTEL, N
    MATERLIK, G
    ZEGENHAGEN, J
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1985, 58 (03): : 199 - 204
  • [10] RBBR/SI(111) INTERFACE STUDIED BY THE X-RAY STANDING-WAVE METHOD
    ETELANIEMI, V
    MICHEL, EG
    MATERLIK, G
    SURFACE SCIENCE, 1993, 287 : 288 - 293
12345