PHOTOELECTRIC PROPERTIES OF pGa1 - xAlxAs-iGaAs-nGaAs HETEROJUNCTIONS.

The p-i-n diodes investigated were made by the liquid epitaxy method. The substrates were wafers of semi-insulating n-type gallium arsenide, doped with chromium, with a resistivity of rho equals 10**6 minus 10**7 ohm-cm. A broad maximum was observed on the spectral characteristic of these samples at lambda //m//a//x equals 0. 7 mu m. Reducing the thickness of the p-layer by etching leads to an appreciable increase in the photosensitivity in the short-wavelength portion of the spectrum. The integrated sensitivity was determined to be S//i equals 1 A/lm at T equals 300 degree K, and S//i equals 30-50 A/lm at T equals 77 degree K. At bias voltages close to the breakdown voltages the absolute photosensitivity is 5-8 multiplied by (times) 10**2 A/W. The integral gain coefficient is 10**3 minus 10**4.