Technology of Stable Josephson Junctions.

被引：0
|
作者：
Diepers, H.
Hillenbrand, B.
Kress, R.
Mai, H.
Schmidt, O.
Schuster, K.
Uzel, Y.
Wohlleben, K.
机构：
来源：
Bundesministerium fuer Forschung und Technologie, Forschungsbericht, Technologische Forschung und Entwicklung | 1975年
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中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
For fabricating Josephson tunnel junctions and microbridges different material combinations, configurations and preparation techniques were examined. The best results were obtained with Nb/Nb oxide/Pb junctions produced by UHV evaporation and with an oxide layer formed by dc plasma oxidation. Junctions with rf anodized or Al//2O//3 barriers yielded good tunneling characteristiscs but the reproducibility was still unsatisfactory. For the fabrication of Nb microbridges the electron beam exposure technique has proved most successful.
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