InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition

被引：0

作者：

Ryou, Jae-Hyun ^{[1
]}

Dupuis, Russell D. ^{[1
]}

Reddy, C.V. ^{[1
]}

Narayanamurti, Venkatesh ^{[1
]}

Mathes, David T. ^{[1
]}

Hull, Robert ^{[1
]}

机构：

[1] Univ of Texas at Austin, Austin, United States

来源：

Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年

关键词：

Luminescence - Metallorganic chemical vapor deposition - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconductor growth - Substrates;

D O I：

暂无

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学科分类号：

摘要：

We report the characteristics of InP self-assembled quantum dots embedded in In0.5Al0.5P on GaAs substrates and InxAl1-xP self-assembled quantum dots on GaP substrates grown by metalorganic chemical vapor deposition. InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475 C to 600 C. At 650 C, however, dramatically smaller and densely distributed quantum dots are formed. The InP quantum dots grown at 650 C are dislocation-free `coherent' self-assembled quantum dots with an average size of approximately 20 nm (height) and a density of approximately 1.5×108 mm-2. These InP quantum dots have broad range of luminescence corresponding to red or orange in the visible spectrum. InAlP quantum dots on GaP have smaller sizes and higher densities than InP dots on In0.5Al0.5P.

引用

页码：223 / 226