In situ ellipsometric measurement during growth of Ge on Si(111) by molecular beam epitaxy

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[1] Ikuta, Tetsuya
[2] Yoshioka, Yoshifumi
[3] Kamei, Satoshi
[4] Hayashi, Hiroyuki
[5] Shimura, Takayoshi
[6] Umeno, Masataka
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Ikuta, T. (ikuta@asf.mls.eng.osaka-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 41期
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