HIGH SPEED InGaAsP LUMINESCENT DIODE.

被引：0

作者：

Grothe, H.

Proebster, W.

Harth, W.

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来源：

| 1979年

关键词：

Compendex;

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摘要：

Semiconductor diodes

引用

页码：1 / 16

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[11] TUNING OF TWO-CIRCUIT PARAMETRIC AMPLIFIERS BY THE BIAS VOLTAGE OF THE SEMICONDUCTOR DIODE.
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[12] Generalized Analytic Description of a Forward Biased p-i-n Diode.
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[13] HIGH-PRESSURE RADIATION-CHEMICAL LASER INITIATED BY A FAST-ELECTRON BEAM FROM A COAXIAL HIGH-VOLTAGE DIODE.
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[14] X-BAND 50 W SILICON DDR TYPE PULSED IMPATT DIODE.
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[16] FRONT BACK TRACKING IN INGAASP DIODE-LASER TRANSMITTER MODULES
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[17] GAAS DIODE-FET LOGIC-CIRCUITS FOR HIGH-SPEED-FREQUENCY-DIVIDER APPLICATIONS
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[18] MEASUREMENT OF THE PHASE DISTRIBUTION OF MICROWAVE FREQUENCY-MODULATED RADIATION ALONG THE p-n JUNCTION OF A LIGHT-EMITTING DIODE.
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[19] HIGH SPEED LOADCELL.
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