HIGH SPEED InGaAsP LUMINESCENT DIODE.

被引：0
|
作者：
Grothe, H.
Proebster, W.
Harth, W.
机构：
来源：
| 1979年
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Semiconductor diodes
引用
收藏
页码：1 / 16
相关论文
共 50 条
  • [1] Schottky Diode.
    Henne, W.
    1600, (63):
  • [2] MEASUREMENT OF VOLTAGE ACROSS A HIGH-CURRENT DIODE.
    Zakutin, V.V.
    Nasonov, N.N.
    Shenderovich, A.M.
    1600, (19):
  • [3] SHAPING OF HIGH-POWER SHORT PULSES BY MEANS OF A GUNN DIODE.
    Starosel'skiy, V.I.
    Radio engineering & electronic physics, 1980, 25 (04): : 93 - 96
  • [4] BASIC PROPERTIES OF AN ACCUMULATION LAYER IN A GUNN DIODE.
    D'yakonov, M.I.
    Levinshtein, M.E.
    Simin, G.S.
    Soviet physics. Semiconductors, 1981, 15 (11): : 1229 - 1234
  • [5] MODULATION OF INJECTION HETEROLASER RADIATION WITH A GUNN DIODE.
    Logginov, A.D.
    Solov'ev, V.E.
    Soviet Journal of Quantum Electronics (English translation of Kvantovaya Elektronika), 1975, 5 (07): : 842 - 843
  • [6] FREQUENCY MULTIPLIER BASED ON AN AVALANCHE-AND-TRANSIT DIODE.
    Venger, A.Z.
    Ermak, A.N.
    Yakimenko, A.M.
    Instruments and experimental techniques New York, 1980, 23 (3 pt 2): : 691 - 692
  • [7] PULSED ION BEAM GENERATION WITH CRYOGENIC-ANODE DIODE.
    Takahashi, T.
    Horioka, K.
    Hijikawa, M.
    Urai, A.
    Kasuya, K.
    1600, (54):
  • [8] HARMONIC METHOD TO DETERMINE SHOCKLEY'S RELATION PARAMETERS FOR A DIODE.
    Destine, J.
    1600, (ED-33):
  • [9] ELECTRICAL DIAGNOSTICS OF THE OPERATING CONDITIONS IN A MONITORING AMPLIFIER BASED ON A LASER DIODE.
    Luc, Vu Van
    Eliseev, P.G.
    Man'ko, M.A.
    Mikaelyan, G.T.
    Soviet journal of quantum electronics, 1982, 9 (09): : 1194 - 1196
  • [10] LUMPED CIRCUIT REPRESENTATION OF A SYMMETRICAL DOUBLE AVALANCHE REGION IMPATT DIODE.
    Datta, D.N.
    Pal, B.B.
    IETE Journal of Research, 1981, 27 (09) : 313 - 315
12345