TRANSITIONAL CHARACTERISTICS OF InAs p-n JUNCTIONS IN A PHOTODIODE MODE.

被引：0
|
作者：
Andrushko, A.I.
Slobodchikov, S.V.
Usachev, Ye.P.
Filaretova, G.M.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1972年 / 17卷 / 05期
关键词：
TRANSITIONAL CHARACTERISTICS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In the present article, several results of investigating the transitional processes of p-n junctions of indium arsenide, one of the narrow-band compounds A**3B**5 with inverse shift are discussed. The conditions of relaxation of the output signal as a function of the parameters of the diode, load resistance, and voltage bias, are examined.
引用
收藏
页码：865 / 868
相关论文
共 50 条
  • [31] Silicon photodiode with a grid p-n junction
    Blynskii, V. I.
    Vasileuskii, Yu. G.
    Malyshev, S. A.
    Chizh, A. L.
    SEMICONDUCTORS, 2007, 41 (02) : 223 - 226
  • [32] Silicon photodiode with a grid p-n junction
    V. I. Blynskii
    Yu. G. Vasileuskii
    S. A. Malyshev
    A. L. Chizh
    Semiconductors, 2007, 41 : 223 - 226
  • [33] Silicon photodiode with a grid p-n junction
    V. I. Blynskii
    Y. G. Vasileuskii
    S. A. Malyshev
    A. L. Chizh
    Semiconductors, 2007, 41 : 875 - 875
  • [34] Study of the InGaAs planar p-i-n photodiode focal plane array with p-n junctions of reduced sizes
    Zaletaev, N.B.
    Boltar, K.O.
    Lopukhin, A.A.
    Chinareva, I.V.
    Gabbasova, E.V.
    Applied Physics, 2015, 2015-January (04): : 71 - 75
  • [35] VOLT-AMPERE CHARACTERISTICS OF P-N JUNCTIONS IN THE FORWARD DIRECTION
    GRINBERG, AA
    SOVIET PHYSICS-SOLID STATE, 1962, 4 (01): : 69 - 72
  • [36] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN ZINC SULFIDE
    GEORGOBI.AN
    STEBLIN, VI
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 924 - &
  • [37] CHARACTERIOGRAPH FOR RECORDING OF VOLT-CAPACITANCE CHARACTERISTICS OF P-N JUNCTIONS
    SHELYAG, AR
    KOTSYUMA.PA
    BOIKO, VG
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1968, (03): : 716 - &
  • [38] Implanted p-n junctions in GaN
    Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States
    不详
    不详
    不详
    不详
    Solid-State Electron., 7 (1235-1238):
  • [39] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
    ILES, PA
    COPPEN, PJ
    JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
  • [40] REACTIVE CHARACTERISTICS OF NARROW GERMANIUM P-N JUNCTIONS IN BREAKDOWN REGION
    MAHADEVAN, S
    SOLID-STATE ELECTRONICS, 1969, 12 (02) : 119 - +
12345