共 50 条
[44]
IMPURITY REDISTRIBUTION IN SILICON DUE TO ION-BOMBARDMENT
[J].
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS,
1988, 8
:152-154
[46]
PARAMAGNETIC CENTERS GENERATED BY ION-BOMBARDMENT OF SILICON
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1972, 6 (06)
:965-&
[48]
Helium ion bombardment induced amorphization of silicon crystals
[J].
Technical Physics Letters,
2002, 28
:615-617
[50]
INFLUENCE OF ENERGETIC AG ION-BOMBARDMENT ON NICKEL STRUCTURE
[J].
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA,
1990, 54 (07)
:1419-1421