PRESSURE-INDUCED EFFECTS ON PHONONS AND GAP STATES IN ALLOY SEMICONDUCTORS.

被引：0

作者：

Minomura, Shigeru ^{[1
]}

机构：

[1] Hokkaido Univ, Sapporo, Jpn, Hokkaido Univ, Sapporo, Jpn

来源：

| 1987年

关键词：

D O I：

10.1007/978-1-4613-1841-5_16

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学科分类号：

摘要：

引用

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[1] PRESSURE-INDUCED EFFECTS AND PHASE TRANSITIONS IN AMORPHOUS SEMICONDUCTORS.
Minomura, Shigeru
Japan Annual Reviews in Electronics, Computers & Telecommunications: Amorphous Semiconductor Techn, 1981, : 245 - 254
[2] PRESSURE-INDUCED STRUCTURAL EFFECTS IN SEMICONDUCTORS
CRAIN, J
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (27): : 4555 - 4593
[3] PRESSURE-INDUCED TRANSITION IN GAP
ONODERA, A
ISHIZAKI, K
KAWAI, N
SPAIN, IL
REVIEW OF PHYSICAL CHEMISTRY OF JAPAN, 1975, : 167 - 170
[4] ON THE ROLE OF PHONONS FOR THE PRESSURE-INDUCED CHANGE OF VALENCE
TRZASKOMA, P
ZIELINSKI, J
SZOPA, M
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 109 (02): : K129 - K132
[5] Band structure and chemical bonding of GaP: pressure-induced effects
Bouarissa, N.
Algarni, H.
Mezrag, F.
Ajmal Khan, M.
PHASE TRANSITIONS, 2020, 93 (10-11) : 973 - 980
[6] PRESSURE-INDUCED MOTT TRANSITION IN DOPED SEMICONDUCTORS
HUGON, PL
PHYSICS LETTERS A, 1971, A 34 (02) : 120 - &
[7] Infrared spectroscopy of pressure-induced metallization in semiconductors
Kobayashi, M
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 223 (01): : 55 - 64
[8] INDIRECT EXCHANGE INTERACTION IN PARABOLIC SYMMETRY-INDUCED ZERO GAP SEMICONDUCTORS.
Bastard, G.
Lewiner, C.
1979, 40 (08):
[9] FREE CARRIERS AND MULTIFREQUENCY EFFECTS IN THE ENERGY SPECTRA OF NARROW-GAP SEMICONDUCTORS.
Gel'mont, B.L.
Kisin, M.V.
Soviet physics. Semiconductors, 1984, 18 (05): : 506 - 509
[10] PRESSURE-INDUCED STRUCTURAL TRANSFORMATIONS IN AMORPHOUS-SEMICONDUCTORS
TANAKA, K
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 150 (1-3) : 44 - 48

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