STUDY OF NEAR-MICRON InP TRANSFERRED ELECTRON DEVICES.

被引：0

作者：

Czejak, J. ^{[1
]}

Shaw, M.P. ^{[1
]}

East, J. ^{[1
]}

Blakey, P.A. ^{[1
]}

Grubin, H.L. ^{[1
]}

机构：

[1] Wayne State Univ, Dep of Electrical, & Computer Engineering, Detroit,, MI, USA, Wayne State Univ, Dep of Electrical & Computer Engineering, Detroit, MI, USA

来源：

Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1985年 / 134 B-C卷 / 1-3期

关键词：

MATHEMATICAL TECHNIQUES - Numerical Analysis - SEMICONDUCTING INDIUM COMPOUNDS - Electronic Properties - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have experimentally investigated a large number of InP Transferred Electron Devices ranging from 1 to 2 microns in thickness, and have numerically simulated their behavior using both a drift and diffusion model and a Boltzmann transport equation approach. We were able to fit the static I(V) curves and threshold conditions rather well by a proper choice of ideality factor, n, in the control characteristics, which we assumed to be that of a Schottky diode. (Authors abstract)

引用

页码：499 / 501