Structural and electrical properties of n-type poly-Si films prepared by layer-by-layer technique

被引：0
|
作者：
He, Deyan [1 ]
Ishihara, Shun-ichi [1 ]
Shimizu, Isamu [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 08期
关键词：
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页码：3370 / 3375
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