SCATTERING PARAMETERS OF A TRANSISTOR AND THE MICROWAVE NOISE FACTOR OF A TRANSISTOR AMPLIFIER.

被引：0

作者：

Bespalov, V.B.

机构：

来源：

| 1600年 / 28-29期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method of calculating the noise factor of a transistor amplifier from the S-parameters of the transistor and the auxiliary noise factor is presented.

引用

共 50 条

[31] LOW NOISE TRANSISTOR MICROPHONE AMPLIFIER
DAVIDSON, JJ
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (03): : 393 - 394
[32] 3-PORT SCATTERING PARAMETERS FOR MICROWAVE TRANSISTOR MEASUREMENT
SATODA, Y
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (01) : 41 - &
[33] 3-PORT SCATTERING PARAMETERS FOR MICROWAVE TRANSISTOR MEASUREMENT
SATODA, Y
BODWAY, GE
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) : 250 - &
[34] THE NOISE FACTOR OF A FIELD-EFFECT TRANSISTOR POWER-AMPLIFIER
ZAVRAZHNOV, YV
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1984, 38-9 (06) : 47 - 53
[35] PARASITIC MODULATION OF A SIGNAL IN A FIELD-EFFECT TRANSISTOR POWER AMPLIFIER.
Zavrazhnov, Yu.V.
Pupykin, G.A.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1981, 35-36 (09): : 140 - 142
[36] Comments on "low-noise one-port microwave transistor amplifier"
Gardner, P
Paul, DK
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2002, 35 (03) : 251 - 252
[37] TRANSISTOR PARAMETERS AND THEIR INFLUENCE ON AMPLIFIER RISETIME
IVEKOVIC, D
ELECTRONIC ENGINEERING, 1967, 39 (477): : 680 - &
[38] INFLUENCE TRANSISTOR PARAMETERS IN DIFFERENTIAL AMPLIFIER
SIPF, E
ARCHIV FUR TECHNISCHES MESSEN UND INDUSTRIELLE MESSTECHNIK, 1970, (415): : 189 - &
[39] SIMULTANEOUS DETERMINATION OF TRANSISTOR NOISE, GAIN, AND SCATTERING PARAMETERS FOR AMPLIFIER DESIGN THROUGH NOISE-FIGURE MEASUREMENTS ONLY - COMMENT
POSPIESZALSKI, MW
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1986, 35 (02) : 228 - 228
[40] Reflection Amplifier Using a Microwave Transistor.
Zbinden, R.
AGEN-Mitteilungen, 1980, (29): : 21 - 25

← 1 2 3 4 5 →