Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

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Dept. of Electron. and Elec. Eng., Univ. Sheffield, Mappin St., S1 3JD, Sheffield, United Kingdom [1 ]
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J Cryst Growth | / 1085-1088期
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Electronic properties - Emission spectroscopy - Molecular beam epitaxy - Optical properties - Photoluminescence - Relaxation processes - Semiconducting aluminum compounds - Semiconducting indium gallium arsenide - Semiconductor growth - Strain - Substrates - Transmission electron microscopy;
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