Structural and dielectric properties of Bi4Ti3O12 thin films prepared by metalorganic solution deposition

被引：0
作者：
Wang, X.S. [1 ]
Zhang, Y.J. [1 ]
Zhang, L.Y. [2 ]
Yao, X. [2 ]
机构：
[1] Department of Technical Physics, Xidian University, Xian 710071, China
[2] Electron. Mat. Research Laboratory, Xian Jiaotong University, Xian 710049, China
来源：
Applied Physics A: Materials Science and Processing | 1999年 / 68卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：547 / 552
相关论文
共 50 条
  • [41] EFFECTS OF OXYGEN CONCENTRATION ON GROWTH OF BI4TI3O12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    MUHAMMET, R
    NAKAMURA, T
    SHIMIZU, M
    SHIOSAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5215 - 5218
  • [42] Switching properties of Bi3.15Nd0.85Ti3O12 thin films prepared by metalorganic deposition method
    Li, W
    Song, CH
    Ma, J
    Kan, YM
    Lu, X
    Zhu, JS
    INTEGRATED FERROELECTRICS, 2004, 68 : 269 - 278
  • [43] Microstructure and properties of Mn- or Nb-doped Bi4Ti3O12 thin films by chemical solution deposition
    Maiwa, H
    Ichinose, N
    FERROELECTRICS, 2001, 260 (1-4) : 407 - 412
  • [44] Effects of deposition temperatures of Nd-doped Bi4Ti3O12 thin films prepared by pulsed laser deposition
    Kim, Eun Young
    Cho, Sam Yeon
    Kim, Byung Hoon
    Yang, Sun A.
    Lee, Gyoung Ja
    Lee, Min Ku
    Bu, Sang Don
    FERROELECTRICS, 2018, 533 (01) : 56 - 62
  • [45] Photoelectric effects in chemical solution deposited Bi4Ti3O12 thin films
    Pintilie, L
    Alexe, M
    Pignolet, A
    Hesse, D
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P9): : 101 - 104
  • [46] Dielectric properties and crystallization in amorphous Bi4Ti3O12
    Takashige, M
    Hamazaki, S
    Kokubun, M
    Haga, Y
    Yamaguchi, T
    Jang, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B): : 7211 - 7213
  • [47] Ferroelectric properties of Bi4Ti3O12 thin films prepared on TiO2 anatase layer
    Higuchi, T
    Nakamura, M
    Hachisu, Y
    Saitoh, M
    Hattori, T
    Tsukamoto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (9B): : 6585 - 6589
  • [48] STRUCTURAL AND ELECTRICAL STUDIES ON RAPID THERMALLY PROCESSED FERROELECTRIC BI4TI3O12 THIN-FILMS BY METALLOORGANIC SOLUTION DEPOSITION
    JOSHI, PC
    KRUPANIDHI, SB
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) : 5827 - 5833
  • [49] Ferroelectric properties of Bi4Ti3O12 thin films prepared on TiO2 anatase layer
    Higuchi, Tohru
    Nakamura, Makoto
    Hachisu, Yuji
    Saitoh, Masanori
    Hattori, Takeshi
    Tsukamoto, Takeyo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (9 B): : 6585 - 6589
  • [50] Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering
    Yang, Jian-Ping
    Li, Xing-Ao
    Zuo, An-You
    Yuan, Zuo-Bin
    Weng Zhu-Lin
    HIGH-PERFORMANCE CERAMICS VI, 2010, 434-435 : 296 - +
12345