Structural and dielectric properties of Bi4Ti3O12 thin films prepared by metalorganic solution deposition

被引：0
|
作者：
Wang, X.S. [1 ]
Zhang, Y.J. [1 ]
Zhang, L.Y. [2 ]
Yao, X. [2 ]
机构：
[1] Department of Technical Physics, Xidian University, Xian 710071, China
[2] Electron. Mat. Research Laboratory, Xian Jiaotong University, Xian 710049, China
来源：
Applied Physics A: Materials Science and Processing | 1999年 / 68卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：547 / 552
相关论文
共 50 条
  • [31] Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition
    Watanabe, T
    Saiki, A
    Saito, K
    Funakubo, H
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3934 - 3938
  • [32] Ferroelectric Properties of (Bi, Sm)4Ti3O12 (BST) Thin Films Fabricated by a Metalorganic Solution Deposition Method
    S. S. Kim
    E. K. Choi
    H. J. Kim
    M. H. Park
    H. S. Lee
    W. J. Kim
    J. C. Bae
    T. K. Song
    H. S. Lee
    J. Y. Lee
    Journal of Electroceramics, 2004, 13 : 83 - 88
  • [33] Ferroelectric properties of (Bi, SM)4Ti3O12 (BST) thin films fabricated by a metalorganic solution deposition method
    Kim, SS
    Choi, EK
    Kim, HJ
    Park, MH
    Lee, HS
    Kim, WJ
    Bae, JC
    Song, TK
    Lee, HS
    Lee, JY
    JOURNAL OF ELECTROCERAMICS, 2004, 13 (1-3) : 83 - 88
  • [34] Pure Bi4Ti3O12 thin films with improved ferroelectric properties
    Chiou, TY
    Kuo, DH
    APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3196 - 3198
  • [35] Electrical properties of ferroelectric Bi4Ti3O12 thin films by APMOCVD
    Wang, H
    Shen, XN
    Su, XJ
    Wang, Z
    Shang, SX
    Wang, M
    FERROELECTRICS, 1997, 195 (1-4) : 233 - 236
  • [36] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    W. Jo
    Applied Physics A, 2001, 72 : 81 - 84
  • [37] Properties of Bi4Ti3O12 thin films grown at low temperatures
    Shibaura Inst of Technology, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 B (5885-5888):
  • [38] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    Jo, W.
    Applied Physics A: Materials Science and Processing, 2001, 72 (01): : 81 - 84
  • [39] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    Jo, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (01): : 81 - 84
  • [40] Properties of Bi4Ti3O12 thin films grown at low temperatures
    Yamaguchi, M
    Nagatomo, T
    Omoto, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5885 - 5888
12345