NONLINEAR THEORY OF AVALANCHE TRANSIT-TIME DIODES WITH A WIDE MULTIPLICATION LAYER.

被引：0

作者：

Ovchinnikov, K.D. ^{[1
]}

机构：

[1] Leningrad Electrotechnical Inst of, Communications, USSR, Leningrad Electrotechnical Inst of Communications, USSR

来源：

Radiophysics and quantum electronics | 1985年 / 28卷 / 10期

关键词：

D O I：

暂无

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学科分类号：

摘要：

SEMICONDUCTOR DIODES, AVALANCHE

引用

页码：932 / 939

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