Lower temperature deposition of polycrystalline silicon films from a modified inductively coupled silane plasma

被引：0

作者：

Goshima, Kazutomo ^{[2
]}

Toyoda, Hirotaka ^{[2
]}

Kojima, Tetsuya ^{[2
]}

Nishitani, Mikihiko ^{[1
]}

Kitagawa, Masatoshi ^{[1
]}

Yamazoe, Hiroshi ^{[1
]}

Sugai, Hideo ^{[2
]}

机构：

[1] Matsushita Electric Industrial Co., 3-1-1 Yagumo-Nakamachi, Moriguchi 570, Japan

[2] Department of Electrical Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 6 A期

关键词：

D O I：

10.1143/jjap.38.3655

中图分类号：

学科分类号：

摘要：

引用

页码：3655 / 3659