MODEL DIELECTRIC FUNCTION FOR DOPED SEMICONDUCTORS.

被引：0
|
作者：
ROBERT SINGH, M.
BALASUBRAMANIAN, S.
机构：
来源：
| 1982年 / V 20卷 / N 1期
关键词：
CRYSTALS; -; STRUCTURE;
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摘要：
DIELECTRIC FUNCTIONS BASED ON THE RESTA MODEL FOR SEVERAL SEMICONDUCTORS HAVING DIAMOND AND ZINC BLENDE STRUCTURES ARE PRESENTED AND COMPARED WITH THOSE BASED ON THE PENN MODEL. THE EFFECT OF IMPURITY ELECTRONS ON THE DIELECTRIC FUNCTION IS TREATED IN TERMS OF AN EFFECTIVE DIELECTRIC FUNCTION WHICHIS USEFUL IN COMPUTING THE DONOR BINDING ENERGIES AND ELECTRON MOBILITIES IN DOPED SEMICONDUCTORS.
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