MODEL DIELECTRIC FUNCTION FOR DOPED SEMICONDUCTORS.

被引：0
|
作者：
ROBERT SINGH, M.
BALASUBRAMANIAN, S.
机构：
来源：
| 1982年 / V 20卷 / N 1期
关键词：
CRYSTALS; -; STRUCTURE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
DIELECTRIC FUNCTIONS BASED ON THE RESTA MODEL FOR SEVERAL SEMICONDUCTORS HAVING DIAMOND AND ZINC BLENDE STRUCTURES ARE PRESENTED AND COMPARED WITH THOSE BASED ON THE PENN MODEL. THE EFFECT OF IMPURITY ELECTRONS ON THE DIELECTRIC FUNCTION IS TREATED IN TERMS OF AN EFFECTIVE DIELECTRIC FUNCTION WHICHIS USEFUL IN COMPUTING THE DONOR BINDING ENERGIES AND ELECTRON MOBILITIES IN DOPED SEMICONDUCTORS.
引用
收藏
页码：1 / 4
相关论文
共 50 条
  • [1] DANGLING BONDS AND METASTABILITY IN SEMICONDUCTORS.
    Pankove, Jacques I.
    1987,
  • [2] VIBRATIONAL SPECTRA OF THE INTERSTITIALS IN THE DIAMOND STRUCTURE SEMICONDUCTORS.
    Fu, Ying
    Xu, Wenlan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (06): : 672 - 680
  • [3] TRANSFORMATION OF THE SIZE OF CLUSTERS OF INTRINSIC POINT DEFECTS IN SEMICONDUCTORS.
    Ital'yantsev, A.G.
    Mordkovich, V.N.
    Soviet physics. Semiconductors, 1983, 17 (02): : 140 - 144
  • [4] INTERSTITIAL MODEL FOR DIELECTRIC-RELAXATION OF ZNF2 DOPED WITH LITHIUM
    ROTH, TA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1547 - 1550
  • [5] Optical dielectric functions of wurtzite III-V semiconductors
    De, Amrit
    Pryor, Craig E.
    PHYSICAL REVIEW B, 2012, 85 (12)
  • [6] Three-Dimensional Atomic Structure of Metastable Nanoclusters in Doped Semiconductors
    Couillard, Martin
    Radtke, Guillaume
    Knights, Andrew P.
    Botton, Gianluigi A.
    PHYSICAL REVIEW LETTERS, 2011, 107 (18)
  • [7] Structural and Dielectric Studies of Pure and Mn Doped GaSe
    Abdullah, M. M.
    Khan, M. Ajmal
    Bhagavannarayana, G.
    Wahab, M. A.
    SCIENCE OF ADVANCED MATERIALS, 2011, 3 (02) : 239 - 244
  • [8] Anisotropy and phonon modes from analysis of the dielectric function tensor and the inverse dielectric function tensor of monoclinic yttrium orthosilicate
    Mock, A.
    Korlacki, R.
    Knight, S.
    Schubert, M.
    PHYSICAL REVIEW B, 2018, 97 (16)
  • [9] Single-ion anisotropy in Mn-doped diluted magnetic semiconductors
    Savoyant, A.
    Stepanov, A.
    Kuzian, R.
    Deparis, C.
    Morhain, C.
    Grasza, K.
    PHYSICAL REVIEW B, 2009, 80 (11):
  • [10] Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
    Look, D. C.
    Leedy, K. D.
    Vines, L.
    Svensson, B. G.
    Zubiaga, A.
    Tuomisto, F.
    Doutt, D. R.
    Brillson, L. J.
    PHYSICAL REVIEW B, 2011, 84 (11):
12345