The micro-magnetic structures on Mn+ ion-implanted GaSb

被引：0

作者：

Zhang, Fuqiang ^{[1
,2
]}

Chen, NuoFu ^{[1
,2
]}

Liu, Zhikai ^{[1
]}

Chai, Chunlin ^{[1
]}

Yang, Shaoyan ^{[1
]}

Yang, Junling ^{[1
]}

Wu, Jinliang ^{[1
,2
]}

Lin, Lanying ^{[1
,2
]}

Callaghan, Fergal D. ^{[3
]}

Li, Tian ^{[3
]}

Foxon, C. Thomas ^{[3
]}

Bates, Colin A. ^{[3
]}

机构：

[1] Key Lab. of Semiconductor Mat. Sci., Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

[2] Natl. Microgravity Laboratory, Chinese Academy of Sciences, Beijing 100080, China

[3] Sch. of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, United Kingdom

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 6 A期

关键词：

Computer simulation - Ion implantation - Magnetic domains - Magnetic materials - Magnetization - Manganese - Microscopic examination - Structure (composition);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The micro-magnetic structures of Mn+ ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation.

引用

页码：3389 / 3391

共 50 条

[11] RBS/channeling characterization of GaSb and ion-implanted GaSb after several surface treatments
Univ of Lisbon, Lisbon, Portugal
Nucl Instrum Methods Phys Res Sect B, 1-2 (83-88):
[12] SUPERCONDUCTING PROPERTIES OF ION-IMPLANTED IN MN ALLOYS
BAURIEDL, W
HEIM, G
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (01): : 29 - 36
[13] RBS/channeling characterization of GaSb and ion-implanted GaSb after several surface treatments
Dai, ZN
Soares, JC
da Silva, MF
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 142 (1-2): : 83 - 88
[14] Magnetic properties of ion-implanted diamond
Hoehne, R.
Esquinazi, P.
Heera, V.
Weishart, H.
DIAMOND AND RELATED MATERIALS, 2007, 16 (08) : 1589 - 1596
[15] MICRO-MAGNETIC STRUCTURES OF PLANAR CHARGED WALLS
SHIR, CC
LIN, YS
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 2270 - 2272
[16] Formation of cellular defect structure on GaSb ion-implanted at low temperature
Nitta, N
Taniwaki, M
Hayashi, Y
Yoshiie, T
JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1799 - 1802
[17] Flicker noise in ion-implanted silicon structures
Makoviychuk, MI
Parshin, EO
Rekshinskii, VA
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 414 - 417
[18] CHEMICAL-BONDS IN ION-IMPLANTED STRUCTURES
DEZSI, I
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1995, 190 (02): : 225 - 235
[19] ION-IMPLANTED STRUCTURES AND DOPED LAYERS IN DIAMOND
PRINS, JF
MATERIALS SCIENCE REPORTS, 1992, 7 (7-8): : 271 - 364
[20] DESIGN AND EVALUATION OF ION-IMPLANTED CMOS STRUCTURES
MOTAMEDI, ME
TAM, KY
STECKL, AJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 578 - 583

← 1 2 3 4 5 →