Formation of thin films of monocrystalline CoSi2 on (100) Si

被引：0
|
作者：
Maex, K.
Brijs, G.
Vanhellemont, J.
Vandervorst, W.
机构：
来源：
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1991年 / 59-60卷 / pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] FORMATION OF THIN-FILMS OF MONOCRYSTALLINE COSI2 ON (100) SI
    MAEX, K
    BRIJS, G
    VANHELLEMONT, J
    VANDERVORST, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 660 - 665
  • [2] ELECTRONIC AND ATOMIC-STRUCTURE OF THIN COSI2 FILMS ON SI(111) AND SI(100)
    CHAMBLISS, DD
    RHODIN, TN
    ROWE, JE
    PHYSICAL REVIEW B, 1992, 45 (03): : 1193 - 1203
  • [3] EPITAXIAL-GROWTH OF COSI2 LAYER ON (100)SI AND FACET FORMATION AT THE COSI2/SI INTERFACE
    BYUN, JS
    KIM, DH
    KIM, WS
    KIM, HJ
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1725 - 1730
  • [4] Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying
    Özean, Ahmet S.
    Ludwig Jr., Karl F.
    Detavernier, Christophe
    Lavoie, Christian
    Jordan-Sweet, Jean L.
    Journal of Applied Physics, 2004, 95 (12): : 8376 - 8381
  • [5] Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying
    Özcan, AS
    Ludwig, KF
    Detavernier, C
    Lavoie, C
    Jordan-Sweet, JL
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8376 - 8381
  • [6] FORMATION OF THIN-FILMS OF COSI2 ON GAAS
    HULT, M
    PERSSON, L
    ELBOUANANI, M
    ANDERSSON, M
    OSTLING, M
    LUNDBERG, N
    ZARING, C
    GEORGSSON, K
    COHEN, DD
    DYTLEWSKI, N
    JOHNSTON, PN
    WALKER, SR
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2435 - 2443
  • [7] Growth and characterization of CoSi2 films on Si (100) substrates
    Takahashi, F
    Irie, T
    Shi, J
    Hashimoto, M
    APPLIED SURFACE SCIENCE, 2001, 169 : 315 - 319
  • [8] Preparation of epitaxial oxide thin films on Si(100) substrates with CoSi2 surface layers
    Li, YJ
    Linzen, S
    Seidel, P
    Machalett, F
    Schmid, F
    JOURNAL OF CRYSTAL GROWTH, 1996, 162 (3-4) : 147 - 153
  • [9] Thermal stability of ultra-thin CoSi2 films on Si(100)-2×1 surfaces
    Ikegami, H.
    Ikeda, H.
    Zaima, S.
    Yasuda, Y.
    Applied Surface Science, 1997, 117-118 : 275 - 279
  • [10] Preparation of epitaxial oxide thin films on Si(100) substrates with CoSi2 surface layers
    Friedrich-Schiller-Universitaet Jena, Jena, Germany
    J Cryst Growth, 3-4 (147-153):
12345