ELECTRONIC STATES OF SELECTED DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS.

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作者：
Hemstreet, L.A.
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来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1982年 / 116 B&C卷 / 1-3期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Defects;
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摘要：
The results of self-consistent cluster calculations of the electronic states associated with cation vacancies and anion anti-site defects in InP, GaP, and GaAs are summarized. Also presented and discussed are the results obtained for the multi-electron impurity levels associated with substitutional chromium and iron transition metal atoms in an InP host.
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页码：116 / 120
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