Raman scattering study of bismuth layer-structure ferroelectrics

被引:0
|
作者
Kojima, Seiji [1 ]
Imaizumi, Ryo [1 ]
Hamazaki, Shinichi [1 ]
Takashige, Masaaki [1 ]
机构
[1] Univ of Tsukuba, Tsukuba, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 9 B期
关键词
Barium compounds - Calcium compounds - Lead compounds - Polarization - Raman scattering - Raman spectroscopy - Semiconducting bismuth compounds - Strontium compounds - Titanium oxides;
D O I
暂无
中图分类号
学科分类号
摘要
The lattice dynamical properties have been studied by Raman spectroscopy in bismuth layer-structure oxides Bi4Ti3O12, and ABi4Ti4O15 (A = Ba, Ca, Pb, Sr). The rigid-layer modes were observed in all compounds in the range 57-62.5 cm-1. The lowest mode of Bi4Ti3O12 shows marked softening, and the square frequency of the lowest mode is linearly related to the square of the spontaneous polarization. As for CaBi4Ti4O15 and SrBi4Ti4O15 the underdamped soft modes were also clearly observed. In contrast, in BaBi4Ti4O15 only low-frequency over-damped modes have been observed. In PbBi4Ti4O15 the low-frequency spectra have a complicated structure and the softening of the underdamped modes was not observed clearly.
引用
收藏
页码:5559 / 5564
相关论文
共 50 条
  • [31] Possibility of new mixed bismuth layer-structured ferroelectrics
    Takenaka, T
    Komura, K
    Sakata, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 5080 - 5083
  • [32] Disorder-induced Raman scattering in dilute ferroelectrics
    Torgashev, VI
    Yuzyuk, YI
    Latush, LT
    Timonin, PN
    Farhi, R
    FERROELECTRICS, 1997, 199 (1-4) : 197 - 205
  • [33] Optical and field emission properties of layer-structure GaN nanowires
    Cui, Zhen
    Li, Enling
    Shi, Wei
    Ma, Deming
    MATERIALS RESEARCH BULLETIN, 2014, 56 : 80 - 85
  • [34] Mie scattering and domain structure of ferroelectrics
    Yilmaz, S
    Mamedov, AM
    Yusufova, M
    Karadag, F
    FERROELECTRICS, 2002, 270 : 1501 - 1506
  • [35] RAMAN-SCATTERING STUDY ON RB2ZNCL4-GROUP FERROELECTRICS
    TAKASHIGE, M
    NAKAMURA, T
    SAWADA, S
    FERROELECTRICS, 1980, 24 (1-4) : 143 - 146
  • [36] Study of porous silicon structure by Raman scattering
    Dariani, R. S.
    Ahmadi, Z.
    OPTIK, 2013, 124 (22): : 5353 - 5356
  • [37] Piezoelectric properties and structural characterization of (Na,Bi)Bi2Ta2O9 ceramics with bismuth layer-structure
    Aoyagi, R
    Matsushita, M
    Komagata, K
    Takeda, H
    Okamura, S
    Shiosaki, T
    ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, 2002, : 311 - 314
  • [38] MAGNETIC-PROPERTIES OF IRON-DOPED LAYER-STRUCTURE DICHALCOGENIDES
    HILLENIUS, SJ
    COLEMAN, RV
    DOMB, ER
    SELLMYER, DJ
    PHYSICAL REVIEW B, 1979, 19 (09): : 4711 - 4722
  • [39] Impulsive stimulated Raman scattering of femtosecond pulse laser in ferroelectrics
    Jiang, Yaoliang
    Hikita, Tomoyuki
    Guangxue Xuebao/Acta Optica Sinica, 2001, 21 (08): : 913 - 917
  • [40] A stable free radical as donor: A layer-structure organic pressure sensor
    Hutchison, K
    Srdanov, G
    Menon, R
    Gabriel, JC
    Knight, B
    Wudl, F
    SYNTHETIC METALS, 1997, 86 (1-3) : 2147 - 2148