Zn incorporation and band gap shrinkage in p-type GaAs

被引：0
|
作者：
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India [1 ]
不详 [2 ]
机构：
来源：
J Appl Phys | / 10卷 / 4931-4937期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Zn incorporation and band gap shrinkage in p-type GaAs
    Hudait, MK
    Modak, P
    Hardikar, S
    Krupanidhi, SB
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 4931 - 4937
  • [2] Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation
    Ahn, Kwang-Soon
    Deutsch, Todd
    Yan, Yanfa
    Jiang, Chun-Sheng
    Perkins, Craig L.
    Turner, John
    Al-Jassim, Mowafak
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
  • [3] Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation
    Wang, Gang
    Zheng, Jinju
    Xu, Boyi
    Zhang, Chaonan
    Zhu, Yue
    Fang, Zhi
    Yang, Zuobao
    Shang, Ming-Hui
    Yang, Weiyou
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (13): : 7495 - 7501
  • [4] BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
    FENG, MS
    FANG, CSA
    CHEN, HD
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 42 (02) : 143 - 147
  • [5] EFFECTIVE BAND-GAP SHRINKAGE IN GAAS
    HARMON, ES
    MELLOCH, MR
    LUNDSTROM, MS
    APPLIED PHYSICS LETTERS, 1994, 64 (04) : 502 - 504
  • [6] ELECTRICAL MEASUREMENTS OF BANDGAP SHRINKAGE IN HEAVILY DOPED P-TYPE GAAS
    KLAUSMEIERBROWN, ME
    MELLOCH, MR
    LUNDSTROM, MS
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) : 7 - 11
  • [7] LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS
    YANG, BH
    GISLASON, HP
    LINNARSSON, M
    PHYSICAL REVIEW B, 1993, 48 (16): : 12345 - 12348
  • [8] MODELING OF HYDROGEN DIFFUSION IN P-TYPE GAAS-ZN
    RAHBI, R
    MATHIOT, D
    CHEVALLIER, J
    GRATTEPAIN, C
    RAZEGHI, M
    PHYSICA B, 1991, 170 (1-4): : 135 - 140
  • [9] INTERACTIONS OF DIFFUSED ZN AND P-TYPE DOPANTS (BE, C) IN GAAS
    NAKAJIMA, O
    ITO, H
    ISHIBASHI, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 563 - 568
  • [10] Pd/Zn/Pd ohmic contacts to p-type GaP
    Li, BJ
    Liu, EK
    Zhang, FJ
    SOLID-STATE ELECTRONICS, 1997, 41 (06) : 917 - 920
12345