HIGH-PERFORMANCE GAINAS INTERDIGITATED METAL-SEMICONDUCTOR-METAL (IMSM) 1. 3- mu M PHOTODETECTOR GROWN ON A GAAS SUBSTRATE.

被引：0
|
作者：
Rogers, D.L. [1 ]
Woodall, J.M. [1 ]
Pettit, G.D. [1 ]
McInturff, D. [1 ]
机构：
[1] IBM, Yorktown Heights, NY, USA, IBM, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
1
引用
收藏
相关论文
共 25 条
  • [11] HIGH-FREQUENCY PERFORMANCE OF INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS AT 1.55-MU-M AND 1.3-MU-M WAVELENGTHS
    SOOLE, JBD
    SCHUMACHER, H
    LEBLANC, HP
    BHAT, R
    KOZA, MA
    APPLIED PHYSICS LETTERS, 1989, 55 (08) : 729 - 731
  • [12] High-performance unbiased Ge metal-semiconductor-metal photodetector covered with asymmetric HfSe2 contact geometries
    Shao, Jifang
    Zhang, Yichi
    Huang, Ziqiang
    Wang, Liming
    Liu, Tao
    Zhang, Ningning
    Hu, Huiyong
    APPLIED OPTICS, 2022, 61 (07) : 1778 - 1783
  • [13] High-Performance Self-Powered Transparent Metal-Semiconductor-Metal Ultraviolet Photodetector Based on Sub-10 nm Thick Dual-Asymmetric Interdigitated Electrodes
    Weng, Chenpu
    Gao, Aoyun
    Huang, Jianfeng
    Yang, Liu
    He, Sailing
    ACS PHOTONICS, 2024, 11 (02) : 561 - 569
  • [14] High-Performance Low-Voltage Transparent Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Ultrathin Gold Asymmetric Interdigitated Electrodes
    Huang, Jianfeng
    Yang, Liu
    He, Sailing
    MICROMACHINES, 2023, 14 (07)
  • [15] High performance metal-semiconductor-metal ultraviolet photodetector based on mixed-dimensional TiO2/CsPbBr3 heterostructures
    Zhang, Tao
    Cai, Siyu
    Liang, Nina
    Gao, Yalei
    Li, Yuanpeng
    Liu, Fuchi
    Long, Lizhen
    Liu, Jun
    PHYSICA SCRIPTA, 2024, 99 (01)
  • [16] HIGH-PERFORMANCE SUB-0.1 MU-M SILICON N-METAL OXIDE SEMICONDUCTOR TRANSISTORS WITH COMPOSITE METAL POLYSILICON GATES
    RISHTON, SA
    MII, YJ
    KERN, DP
    TAUR, Y
    LEE, KY
    LII, T
    JENKINS, K
    QUINLAN, D
    BROWN, T
    DANNER, D
    SEWELL, F
    POLCARI, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2612 - 2614
  • [17] High-performance nonpolar a-plane GaN-based metal-semiconductor-metal UV photo-detectors fabricated on LaAlO3 substrates
    Wang, Wenliang
    Zheng, Yulin
    Li, Xiaochan
    Li, Yuan
    Huang, Liegen
    Li, Guoqiang
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (13) : 3417 - 3426
  • [18] High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3/SiO2 films
    Zhang, Feng
    Yang, Weifeng
    Huang, Huolin
    Chen, Xiaping
    Wu, Zhengyun
    Zhu, Huili
    Qi, Hongji
    Yao, Jianke
    Fan, Zhengxiu
    Shao, Jianda
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [19] HIGH-POWER 1. 3- mu m InGaAsP P-SUBSTRATE BURIED CRESCENT LASERS.
    Sakakibara, Yasushi
    Higuchi, Hideyo
    Oomura, Etsuji
    Nakajima, Yasuo
    Yamamoto, Yousuke
    Goto, Katsuhiko
    Namizaki, Hirofumi
    Ikeda, Kenji
    Susaki, Wataru
    Journal of Lightwave Technology, 1985, LT-3 (05)
  • [20] High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length
    Umezawa, H
    Tsugawa, K
    Yamanaka, S
    Takeuchi, D
    Okushi, H
    Kawarda, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A): : L1222 - L1224
123