ROLE OF STRESSES IN THE FORMATION OF A MODE SPECTRUM IN A PLANE DIFFUSION WAVEGUIDE.

The objective of this work is to calculate the profile of the stresses which arise, their influence on the RI profile, and the structure of the mode spectrum for light with mutually orthogonal polarization. Possible stress relaxation in the layer during low-temperature diffusion is not taken into account. It is shown that the anisotropy in a flat diffusion waveguide can be explained by the character of the stresses in a layer obtained by ion exchange. Thus the use of classical methods involving the thermo- and photoelasticity has made it possible to obtain agreement between the calculated change in the RI and the experimental values.