Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films

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[1] Ghosh, R.
[2] Basak, D.
[3] Fujihara, S.
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Basak, D. (sspdb@mahendra.iacs.res.in) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
Amorphous materials - Binding energy - Crystal structure - Electric properties - Film growth - Photoluminescence - Polycrystalline materials - Scanning electron microscopy - Strain - Substrates - Thin films - Transmission electron microscopy - X ray diffraction analysis;
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摘要
The effect of substrate-induced strain on the structural, electrical and optical properties of polycrystalline ZnO thin films was studied using x-ray diffraction, scanning electron microscopy, electrical resistivity and photoluminescence measurements. The orientation, crystallite size, and electrical resistivity were found to depend strongly upon the substrate induced strain along the c axis. A relatively large tensile strain was shown to exist in ZnO deposited on sapphire and glass, while a smaller compressive strain was found in film deposited on GaN. The results show that GaN, being a closely lattice matched substrate, produces ZnO films of better crystallinity with lower resistivity.
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