Investigation of epitaxial layers ZnTe on substrates GaAs (310) by the methods of ellipsometry and the method of x-ray photoelectronic spectroscopy

被引：0

作者：

Yakushev, M.V. ^{[1
]}

Shvets, V.A. ^{[1
]}

Kesler, V.G. ^{[1
]}

Sidorov, Yu.G. ^{[1
]}

机构：

[1] Inst. Fiziki Poluprovodnikov, SO, RAN, Novosibirsk, Russia

来源：

Avtometriya | 2001年 / 03期

关键词：

Ellipsometry - Semiconducting gallium arsenide - Substrates - Tellurium compounds - Thin films - X ray spectroscopy - Zinc compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The influence of the preepitaxial annealing temperature and the growth temperature on optical characteristics and composition of ZnTe films grown on substrates GaAs(310) is studied by the methods of ellipsometry and x-ray photoelectronic spectroscopy. It is found that absorption at the wavelength 1.96 eV is observed in a growing film at the epitaxy temperatures higher than 330°C. The absorption depends on epitaxy temperature with absorption coefficient reaching 0.2 at the temperature 370°C.

引用

页码：30 / 38

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