MOCVD of advanced dielectric and ferroelectric films by liquid delivery

被引：0
|
作者：
Advanced Technology Materials, Inc, Danbury, United States [1 ]
机构：
来源：
Integr Ferroelectr | / 1 -4 pt 2卷 / 109-118期
关键词：
Number:; MDA972-93-C-0033; Acronym:; DARPA; Sponsor: Defense Advanced Research Projects Agency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] MOCVD of ferroelectric thin films
    Schmidt, C
    Burte, EP
    MICROELECTRONICS RELIABILITY, 1999, 39 (02) : 257 - 260
  • [2] Crystallization kinetics of amorphous ferroelectric films
    Ural State Univ, Ekaterinburg, Russia
    Ferroelectrics, 1-4 (183-186):
  • [3] CuInSe2 thin films grown by MOCVD: Characterization, first devices
    Universite Montpellier II, Montpellier, France
    Thin Solid Films, 1-2 (115-123):
  • [4] Diffusion in ultrathin liquid films
    Schuster, J.
    Cichos, F.
    Von Borzcyskowski, C.
    European Polymer Journal, 2004, 40 (05): : 993 - 999
  • [5] Excimer laser interaction with dielectric thin films
    Friedrich-Schiller-Universitaet Jena, Jena, Germany
    Appl Surf Sci, (393-398):
  • [6] Grating diffraction in (anti-)ferroelectric liquid crystal displays
    Univ of Gent, Gent, Belgium
    Ferroelectrics, 1 -4 pt 4 (1-10):
  • [7] Memory effect in smectic-A phase of ferroelectric liquid crystal
    Thakur, Anil K.
    Bawa, Sukhwant S.
    Biradar, Ashok M.
    Kaur, Sarabjot
    Annapoorni, S.
    Journal of Applied Physics, 2005, 97 (08):
  • [8] Telecommunications applications of ferroelectric liquid-crystal smart pixels
    Cambridge Univ Engineering Dep, Cambridge, United Kingdom
    IEEE Journal on Selected Topics in Quantum Electronics, 1996, 2 (01): : 35 - 46
  • [9] Barium sodium niobate powders and thin films: Preparation and ferroelectric behavior
    Pennsylvania State Univ, University Park, United States
    J Sol Gel Sci Technol, 2 (221-229):
  • [10] High frequency dielectric properties of PLZT thin films
    W3 Consulting, Alexandria, United States
    Integr Ferroelectr, 1 -4 pt 1 (197-203):
12345