Sub-half-micron silicon pattern generation by electron beam direct writing on polysilane films

被引:0
作者
Okamoto, Katsuhiko [1 ]
Shin, Hidetoshi [1 ]
Shiba, Kazutoshi [1 ]
Miyazaki, Seiichi [1 ]
Hirose, Masataka [1 ]
机构
[1] Hiroshima Univ, Hiroshima, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 12 B期
关键词
8;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:4441 / 4443
相关论文
共 50 条
[31]   SUB-THRESHOLD DEFECT GENERATION AND ANNEALING IN SILICON BY INTENSE ELECTRON-BEAM BOMBARDMENT [J].
HINCKLEY, S ;
HORA, H ;
KELLY, JC .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02) :419-427
[32]   Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writing [J].
Kasuga, T ;
Konishi, M ;
Oda, T ;
Moriya, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3870-3873
[33]   Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes [J].
Masuda, Takashi ;
Mori, Masahiro .
NANOTECHNOLOGY, 2021, 32 (19)
[34]   NOVEL SILICON-CONTAINING NEGATIVE RESIST FOR BILAYER APPLICATION IN ELECTRON-BEAM DIRECT WRITING [J].
HASHIMOTO, K ;
ENDO, M ;
SASAGO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (07) :3317-3320
[35]   STUDY OF SUBBOUNDARY GENERATION IN SILICON-ON-INSULATOR FILMS RECRYSTALLIZED BY A PSEUDOLINE ELECTRON-BEAM [J].
HORITA, S ;
FUKAO, K ;
ISHIWARA, H .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2769-2775
[36]   CONSIDERATION ON THE VOID GENERATION MECHANISM IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS [J].
HORITA, S ;
ISHIWARA, H .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2057-2063
[37]   Pattern transfer into silicon using sub-10 nm masks made by Electron Beam Induced Deposition [J].
Scotuzzi, M. ;
Kamerbeek, M. J. ;
Goodyear, A. ;
Cooke, M. ;
Hagen, C. W. .
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VII, 2015, 9423
[38]   Local topographical changes of Ge-(Sb)-Se thin films induced by direct electron beam writing [J].
Smolik, J. ;
Kutalek, P. ;
Samsonova, E. ;
Cernoskova, E. ;
Knotek, P. ;
Cernosek, Z. ;
Todorov, R. ;
Plechacek, T. ;
Schwarz, J. ;
Tichy, L. .
CERAMICS INTERNATIONAL, 2025, 51 (18) :24450-24458
[39]   Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films [J].
Koester, T ;
Goldschmidtboeing, F ;
Hadam, B ;
Stein, J ;
Altmeyer, S ;
Spangenberg, B ;
Kurz, H ;
Neumann, R ;
Brunner, K ;
Abstreiter, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3804-3807
[40]   Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition [J].
Scotuzzi, Marijke ;
Kamerbeek, Martin J. ;
Goodyear, Andy ;
Cooke, Mike ;
Hagen, Cornelis W. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2015, 14 (03)