共 50 条
[31]
SUB-THRESHOLD DEFECT GENERATION AND ANNEALING IN SILICON BY INTENSE ELECTRON-BEAM BOMBARDMENT
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1979, 51 (02)
:419-427
[32]
Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writing
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (06)
:3870-3873
[34]
NOVEL SILICON-CONTAINING NEGATIVE RESIST FOR BILAYER APPLICATION IN ELECTRON-BEAM DIRECT WRITING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
1993, 32 (07)
:3317-3320
[37]
Pattern transfer into silicon using sub-10 nm masks made by Electron Beam Induced Deposition
[J].
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VII,
2015, 9423
[39]
Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1998, 16 (06)
:3804-3807
[40]
Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition
[J].
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS,
2015, 14 (03)