Crystal Structure and Electrophysical Properties of Bismuth Germanate Films.

Bi//1//2GeO//2//0 films belonging to the noncentrosymmetric class I23 have been obtained by magnetron reactive sputtering. The main parameter determining the phase composition of the films is the temperature in the zone of formation of the bismuth-germanium oxide film. Bi//1//2GeO//2//0 films prepared by magnetron sputtering at a substrate temperature of 600 degree C have electrophysical properties close to those of single crystals and may find application in optoelectronics. A photogalvanic effect noted in highly oriented Bi//1//2GeO//2//0 films attests to the possibility of using the material in integral acoustoelectronics.