Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy

被引：0
|
作者：
Mendez-Garcia, Victor Hugo [1 ]
Lopez-Lopez, Maximo [1 ]
Hernandez-Calderon, Isaac [1 ]
机构：
[1] Departamento de Fisica Cent de, Investigacion y de Estudios, Mexico, Mexico
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 9 A-B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
    Sanchez-Garcia, MA
    Calleja, E
    Sanchez, FJ
    Calle, F
    Monroy, E
    Basak, D
    Munoz, E
    Villar, C
    Sanz-Hervas, A
    Aguilar, M
    Serrano, JJ
    Blanco, JM
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 276 - 281
  • [32] Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy
    Liu, JL
    Cai, SJ
    Jin, GL
    Wang, KL
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1998, 1 (04) : 188 - 190
  • [33] Molecular beam epitaxy growth of ZnO using initial Zn layer and MgO buffer layer on Si(111) substrates
    Fujita, M
    Kawamoto, N
    Sasajima, M
    Horikoshi, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1484 - 1486
  • [34] Epitaxial Growth of Si(111)/Er2O3 (111) Structure on Si(111) by Molecular Beam Epitaxy
    Xu Run
    Tang Min-Yan
    Zhu Yan-Yan
    Wang Lin-Jun
    CHINESE PHYSICS LETTERS, 2011, 28 (03)
  • [35] CdTe(111)B grown on Si(111) by molecular beam epitaxy
    Rujirawat, S
    Xin, Y
    Browning, ND
    Sivananthan, S
    Smith, DJ
    Tsen, SCY
    Chen, YP
    Nathan, V
    APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2346 - 2348
  • [36] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY
    TAKASUGI, H
    BANDO, Y
    KITAMI, Y
    KAWABE, M
    JOURNAL OF ELECTRON MICROSCOPY, 1987, 36 (05): : 301 - 301
  • [37] Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy
    Hackley, J.
    Ali, D.
    DiPasquale, J.
    Demaree, J. D.
    Richardson, C. J. K.
    APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [38] InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy
    Robson, M. T.
    LaPierre, R. R.
    JOURNAL OF CRYSTAL GROWTH, 2016, 436 : 1 - 11
  • [39] In situ ellipsometric measurement during growth of Ge on Si(111) by molecular beam epitaxy
    Ikuta, T. (ikuta@asf.mls.eng.osaka-u.ac.jp), 1600, Japan Society of Applied Physics (41):
  • [40] In-assisted growth of InN nanocolumn on Si(111) substrate by molecular beam epitaxy
    Yang, Hang
    Yin, Jingzhi
    Li, Wancheng
    Gao, Fubin
    Zhao, Yang
    Wu, Guoguang
    Zhang, Baolin
    Du, Guotong
    VACUUM, 2016, 128 : 133 - 136
12345