Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy

被引：0
|
作者：
Mendez-Garcia, Victor Hugo [1 ]
Lopez-Lopez, Maximo [1 ]
Hernandez-Calderon, Isaac [1 ]
机构：
[1] Departamento de Fisica Cent de, Investigacion y de Estudios, Mexico, Mexico
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 9 A-B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy
    Karmann, S
    Schenk, HPD
    Kaiser, U
    Fissel, A
    Richter, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 228 - 232
  • [22] Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
    Zhong, Aihua
    Hane, Kazuhiro
    NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 7
  • [23] Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy
    Calarco, Raffaella
    Meijers, Ralph J.
    Debnath, Ratan K.
    Stoica, Toma
    Sutter, Eli
    Luth, Hans.
    NANO LETTERS, 2007, 7 (08) : 2248 - 2251
  • [24] Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy
    Chu, Chia-Pu
    Arafin, Shamsul
    Nie, Tianxiao
    Yao, Kaiyuan
    Kou, Xufeng
    He, Liang
    Wang, Chiu-Yen
    Chen, Szu-Ying
    Chen, Lih-Juann
    Qasim, Syed M.
    BenSaeh, Mohammed S.
    Wang, Kang L.
    CRYSTAL GROWTH & DESIGN, 2014, 14 (02) : 593 - 598
  • [25] Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
    Aihua Zhong
    Kazuhiro Hane
    Nanoscale Research Letters, 7
  • [26] Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
    Ristic, J
    Sánchez-García, MA
    Calleja, E
    Pérez-Rodríguez, A
    Serre, C
    Romano-Rodríguez, A
    Morante, JR
    Koegler, VR
    Skorupa, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 172 - 176
  • [27] Molecular Beam Epitaxy of AlN Layers on Si (111)
    Moreno, Jean-Christophe
    Frayssinet, Eric
    Semond, Fabrice
    Massies, Jean
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 141 - 145
  • [28] Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
    M. A. Sánchez-García
    E. Calleja
    F. J. Sanchez
    F. Calle
    E. Monroy
    D. Basak
    E. Muñoz
    C. Villar
    A. Sanz-Hervas
    M. Aguilar
    J. J. Serrano
    J. M. Blanco
    Journal of Electronic Materials, 1998, 27 : 276 - 281
  • [29] Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy
    Univ of California at Los Angeles, Los Angeles, United States
    Electrochem Solid State Letters, 4 (188-190):
  • [30] INSTABILITY IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF SI/SI(111)
    YANG, HN
    WANG, GC
    LU, TM
    PHYSICAL REVIEW LETTERS, 1994, 73 (17) : 2348 - 2351
12345