Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers

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作者：

Agrawal, G.P. ^{[1
]}

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ 07974, United States

来源：

| 1600年 / 22期

关键词：

CURRENT DENSITY - DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASERS - NONLINEAR GAIN - SIDEMODE - SINGLE-FREQUENCY;

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