Inversion layer mobility in SiC MOSFETs

被引：0
作者：
Sridevan, S. [1 ]
Baliga, B.J. [1 ]
机构：
[1] North Carolina State Univ, Raleigh, United States
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 2期
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页码：997 / 1000
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