Physical damage in silicon formed by helicon wave plasma etching

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[41]   Capacitive, inductive and helicon-wave modes of operation of a helicon plasma source [J].
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[42]   Capacitive, inductive and helicon-wave modes of operation of a helicon plasma source [J].
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[44]   TiN etching and its effects on tungsten etching in SF6/Ar helicon plasma [J].
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