Downstream etching of Si and SiO2 employing CF4/O2 or NF3/O2 at high temperature

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[1] Nagata, Akiyoshi
[2] Ichihashi, Hideki
[3] Kusunoki, Yasutomo
[4] Horiike, Yasuhiro
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Nagata, Akiyoshi | 1600年 / 28期
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