Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors

被引：0

作者：

机构：

[1] Esaev, D.G.

[2] Matsik, S.G.

[3] Rinzan, M.B.M.

[4] Perera, A.G.U.

[5] Liu, H.C.

[6] Buchanan, M.

来源：

Esaev, D.G. (uperera@gsu.edu) | 1879年 / American Institute of Physics Inc.卷 / 93期

关键词：

Cavity resonators - Infrared detectors - Phonons - Photoemission - Semiconducting aluminum compounds - Semiconducting gallium compounds - Spectroscopic analysis;

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摘要：

The room-temperature absorption and reflection spectra for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors were presented. The results calculated based on the free carrier absorption and interaction with optical phonons were in good agreement with the experimental results. It was demonstrated that the resonance cavity architecture could be used to improve the responsivity at specific wavelengths.

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