Investigation of A 450 V rating silicon-on-insulator lateral-double- diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor process on bulk silicon substrate

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[1] Chang, Fang-Long
[2] Lin, Ming-Jang
[3] Liaw, C.W.
[4] Liao, Ta-Chuan
[5] Cheng, Huang-Chung
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Chang, F.-L. (u8811515@cc.nctu.edu.tw) | 1600年 / Japan Society of Applied Physics卷 / 43期
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