LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GaAs WAFERS.

被引：0
|
作者：
Yasuami, Shigeru
Mikami, Hitoshi
Hojo, Akimichi
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1983年 / 22卷 / 10期
关键词：
D O I：
10.1143/jjap.22.1567
中图分类号：
学科分类号：
摘要：
8
引用
收藏
页码：1567 / 1569
相关论文
共 50 条
  • [31] GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD.
    Osaka, Jiro
    Kobayashi, Takashi
    Nakanishi, Hideo
    Reports of the Electrical Communication Laboratory, 1985, 33 (01): : 146 - 155
  • [32] Semi-insulating LEC GaAs substrates with an improved macroscopic and mesoscopic homogeneity
    Jurisch, M
    Flade, T
    Hoffmann, B
    Kohler, A
    Korb, J
    Kretzer, U
    Reinhold, T
    Weinert, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 198 - 202
  • [33] ELECTRICAL HOMOGENEITY OF SEMI-INSULATING LEC GAAS IMPROVED BY POSTGROWTH ANNEALING
    MENNIGER, H
    BEER, M
    GLEICHMANN, R
    RAIDT, H
    ULRICI, B
    VOIGT, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : 95 - 103
  • [34] GROWTH OF SEMI-INSULATING GAAS SINGLE-CRYSTAL BY LEC METHOD
    OSAKA, J
    KOBAYASHI, T
    NAKANISHI, H
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1985, 33 (01): : 146 - 155
  • [35] SEMI-INSULATING GAAS
    HRIVNAK, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 436 - 444
  • [36] PHOTOLUMINESCENCE STUDIES ON SEMI-INSULATING In-DOPED DISLOCATION-FREE GaAs GROWN BY LEC METHOD.
    Noto, Nobuhiko
    Kitagawara, Yutaka
    Takahashi, Tohru
    Takenaka, Takao
    1600, (25):
  • [37] Photo-induced current spectroscopy study on semi-insulating LEC GaAs
    Seghier, D
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (04) : 1071 - 1073
  • [38] SEM-EBIC INVESTIGATIONS OF SEMI-INSULATING UNDOPED LEC-GAAS
    TOKUMARU, Y
    OKADA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (05): : L364 - L366
  • [39] IMPROVED UNIFORMITY OF RESISTIVITY DISTRIBUTION IN LEC SEMI-INSULATING GAAS PRODUCED BY ANNEALING
    OBOKATA, T
    MATSUMURA, T
    TERASHIMA, K
    ORITO, F
    KIKUTA, T
    FUKUDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L602 - L605
  • [40] INHOMOGENEITY OF SEMI-INSULATING GAAS WAFERS WITH NEARLY UNIFORM RESISTIVITY DISTRIBUTION
    SIEGEL, W
    WITTE, H
    KUHNEL, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : K35 - K37
12345