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- [1] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GAAS WAFERSJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1567 - 1569YASUAMI, SMIKAMI, HHOJO, A
- [2] ON THE ORIGIN OF DEFECTS IN SEMI-INSULATING LEC-GROWN GAASSEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 499 - 504WEYHER, JL
- [3] STRIATION ETCHING OF UNDOPED, SEMI-INSULATING LEC-GROWN GAASJOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 459 - 461MIYAZAWA, S
- [4] CHARACTERIZATION OF LEC-GROWN SEMI-INSULATING GAAS FOR INTEGRATED-CIRCUIT APPLICATIONSINSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 7 - 12NANISHI, YYAMAZAKI, HMIZUTANI, TMIYAZAWA, S
- [5] PHOTOLUMINESCENCE DECAY MECHANISM OF THE 1.49 EV EMISSION IN LEC-GROWN SEMI-INSULATING GAASJOURNAL OF LUMINESCENCE, 1988, 40-1 : 359 - 360TEH, CKWEICHMAN, FL
- [6] THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFETS FABRICATED ON LEC-GROWN SEMI-INSULATING SUBSTRATESIEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 800 - 804ISHII, YMIYAZAWA, SISHIDA, S
- [8] EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAASJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L339 - L341YOKOGAWA, MNISHINE, SSASAKI, MMATSUMOTO, KFUJITA, KAKAI, S
- [9] EFFECT OF FE CONTENT ON THE THERMAL-STABILITY OF LEC-GROWN SEMI-INSULATING INPINSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 37 - 42MORIOKA, MKIKUCHI, KKOHE, KAKAI, S
- [10] ETCHING CHARACTERIZATION OF left brace 001 right brace SEMI-INSULATING GaAs WAFERS.Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (03): : 413 - 417Okada, Yasumasa