共 8 条
- [1] NATURE OF THE NONLINEARITY OF THE LUX-AMPERE CHARACTERISTICS OF METAL-SEMICONDUCTOR-METAL STRUCTURES WITH SEMI-INSULATING CADMIUM TELLURIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 763 - 766
- [2] INFLUENCE OF TRAPS ON THE LUX-AMPERE CHARACTERISTICS AND RESPONSE-TIME OF RESISTORS MADE OF SEMIINSULATING CADMIUM TELLURIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 594 - 595
- [3] POTENTIAL BARRIER IN METAL-SEMICONDUCTOR METAL STRUCTURES BASED ON CADMIUM TELLURIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 39 - 41
- [4] INFLUENCE OF A MAGNETIC-FIELD ON CURRENT-VOLTAGE CHARACTERISTICS OF GERMANIUM METAL-SEMICONDUCTOR-METAL AND P+-SEMICONDUCTOR-METAL STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 73 - 74
- [5] Characteristics of thermally treated contacts on porous silicon based metal-semiconductor-metal (MSM) photodetector structures 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 442 - +
- [7] SPATIAL MODULATION OF LIGHT IN PHOTOSENSITIVE HIGH-RESOLUTION METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH LIQUID CRYSTALS. Soviet journal of quantum electronics, 1980, 10 (02): : 167 - 171
- [8] Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures OPTICS EXPRESS, 2013, 21 (15): : 18387 - 18397