High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

被引：0

作者：

Nottenburg, Richard N. ^{[1
]}

Chen, Young-Kai ^{[1
]}

Panish, Morton B. ^{[1
]}

Hamm, R. ^{[1
]}

Humphrey, D.A. ^{[1
]}

机构：

[1] AT&T, Murray Hill, NJ, USA

来源：

Electron device letters | 1988年 / 9卷 / 10期

关键词：

CRYSTALS -- Epitaxial Growth - MOLECULAR BEAM EPITAXY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3 × 3 and 0.8 × 3 μm2, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-angstrom) InGaAs base enhance the DC performance of these transistors.

引用

页码：524 / 526

共 50 条

[1] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
NOTTENBURG, RN
CHEN, YK
PANISH, MB
HAMM, R
HUMPHREY, DA
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 524 - 526
[2] Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Xie, Junling
Cheng, Wei
Wang, Yuan
Niu, Bin
Chang, Long
Chen, Tangsheng
2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 366 - 368
[3] HIGH-SPEED, HIGH-CURRENT-GAIN P-N-P INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LUNARDI, LM
CHANDRASEKHAR, S
HAMM, RA
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (01) : 19 - 21
[4] Current blocking in InP/InGaAs double heterostructure bipolar transistors
McKinnon, WR
McAlister, SP
Abid, Z
Guzzo, EE
JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2771 - 2778
[5] HIGH-CURRENT-GAIN INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY
SUGIURA, O
DENTAI, AG
JOYNER, CH
CHANDRASEKHAR, S
CAMPBELL, JC
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 253 - 255
[6] SELFALIGNED INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
FEYGENSON, A
TEMKIN, H
TSANG, WT
YANG, L
YADVISH, RD
SCORTINO, PF
ELECTRONICS LETTERS, 1991, 27 (13) : 1116 - 1118
[7] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
CHEN, YK
NOTTENBURG, RN
PANISH, MB
HAMM, RA
HUMPHREY, DA
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) : 267 - 269
[8] SCALED ALINAS/INGAAS AND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
JALALI, B
NOTTENBURG, RN
CHEN, YK
LEVI, AFJ
CHO, AY
PANISH, MB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2602 - 2602
[9] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS
FEYGENSON, A
RITTER, D
HAMM, RA
SMITH, PR
MONTGOMERY, RK
YADVISH, RD
TEMKIN, H
PANISH, MB
ELECTRONICS LETTERS, 1992, 28 (07) : 607 - 609
[10] InP/InGaAs heterostructure bipolar transistors using a patterned subcollector
Hamm, RA
Ryan, R
Pinzone, C
Kopf, R
Pullela, R
Tate, A
Burm, J
PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX), 1999, 99 (04): : 66 - 72

← 1 2 3 4 5 →