Crystalline properties of laser crystallized silicon films

被引：0

作者：

Sameshima, Toshiyuki ^{[1
]}

Saitoh, Keiko ^{[1
]}

Sato, Mitsuru ^{[1
]}

Tajima, Akimitsu ^{[1
]}

Takashima, Nobukazu ^{[1
]}

机构：

[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 10 B期

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摘要：

The carrier mobility of phosphorus-doped laser crystallized polycrystalline silicon (poly-Si) films was investigated. An analysis of the free carrier optical absorption spectra gave the carrier mobility, 6-11 cm2/V&middots, for the laser energy between 140 (the crystallization threshold) and 280 mJ/cm2. The mobility increased as the temperature decreased from 473 K to 77 K because of the reduced carrier scattering by the lattice vibration as in single crystalline silicon. On the other hand, the carrier mobility obtained by the Hall effect measurements increased from 1 to 5 cm2/V&middots as the laser energy increased. The mobility for samples crystallized near the crystalline threshold decreased as the temperature decreased from 473 K to 77 K. This is probably caused by lack of the thermal excitation energy for crossing the energy barrier at the grain boundary.

引用

页码：1360 / 1363